(PR) Infineon Starts World's First 300-Millimeter Power Silicon Carbide (SiC) Wafer Production
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has successfully processed 300-millimeter silicon carbide wafers into functional power devices at…
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Infineon has begun producing functional power devices from 300-millimeter silicon carbide wafers at its manufacturing facility in Villach, Austria. The company is the first to achieve this at full production scale. The larger wafer size yields approximately 2.3 times more chips per wafer compared to the 200-millimeter standard previously used in the industry.
The production process utilized existing silicon manufacturing equipment already present at the facility. This approach allowed Infineon to reach the milestone without requiring entirely new tooling or infrastructure investments for the transition to larger wafers.
The move addresses Infineon's strategy to expand its silicon carbide power semiconductor portfolio while securing consistent supply for customers. The shift to 300-millimeter wafers represents a step toward greater manufacturing efficiency in the power device sector.
What happened
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its fab in Villach, Austria. Infineon is the first company to pioneer this innovation milestone in a full-scale semiconductor fab environment. It was realized by utilizing existing silicon (Si) manufacturing equipment. This early achievement of functional power devices reflects Infineon's strong focus on providing customers with a comprehensive portfolio of high-performance SiC power semiconductors and ensuring long-term supply.
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- 01 Techpowerup first seen (PR) Infineon Starts World's First 300-Millimeter Power Silicon Carbide (SiC) Wafer Producti
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